Infineon IPD053N08N3 G Type N-Channel MOSFET, 90 A, 80 V Enhancement, 5-Pin TO-252 IPD053N08N3GATMA1
- N° de stock RS:
- 171-1937
- Référence fabricant:
- IPD053N08N3GATMA1
- Fabricant:
- Infineon
Sous-total (1 paquet de 10 unités)*
9,78 €
(TVA exclue)
11,83 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- 8 950 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 10 + | 0,978 € | 9,78 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 171-1937
- Référence fabricant:
- IPD053N08N3GATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 90A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | TO-252 | |
| Series | IPD053N08N3 G | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 9.5mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 150W | |
| Typical Gate Charge Qg @ Vgs | 52nC | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Width | 7.36 mm | |
| Length | 6.73mm | |
| Height | 2.41mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 90A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type TO-252 | ||
Series IPD053N08N3 G | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 9.5mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 150W | ||
Typical Gate Charge Qg @ Vgs 52nC | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Width 7.36 mm | ||
Length 6.73mm | ||
Height 2.41mm | ||
Automotive Standard No | ||
Statut RoHS non applicable
Infineon MOSFET
The Infineon TO-252-3 surface mount N-channel MOSFET is a new age product with a drain-source resistance of 5.3mohm at a gate-source voltage of 10V. The MOSFET has continuous drain current of 90A. It has a maximum gate-source voltage of 20V and drain-source voltage of 80V. It has a maximum power dissipation of 150W. The MOSFET has a minimum and a maximum driving voltage of 6V and 10V respectively. It has been optimized for lower switching and conduction losses. The MOSFET tackles the most challenging applications giving full flexibility in limited spaces. It is designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Dual sided cooling
• Excellent gate charge x RDS (ON) product (FOM)
• Lead (Pb) free plating
• Low parasitic inductance
• Low profile (<0, 7mm)
• Operating temperature ranges between -55°C and 175°C
• Optimized technology for DC-DC converters
• Superior thermal resistance
Applications
• AC-DC
• Adapter
• DC-DC
• LED
• Motor control
• PC power
• Server power supplies
• SMPS
• Solar
• Telecommunication
Certifications
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• IEC61249-2-21
• JEDEC
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