Infineon OptiMOS-TM5 Type N-Channel MOSFET, 74 A, 80 V Enhancement, 8-Pin TDSON BSC072N08NS5ATMA1
- N° de stock RS:
- 222-4620
- Référence fabricant:
- BSC072N08NS5ATMA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 paquet de 10 unités)*
7,85 €
(TVA exclue)
9,50 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- 8 430 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 10 - 40 | 0,785 € | 7,85 € |
| 50 - 90 | 0,745 € | 7,45 € |
| 100 - 240 | 0,73 € | 7,30 € |
| 250 - 490 | 0,683 € | 6,83 € |
| 500 + | 0,636 € | 6,36 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 222-4620
- Référence fabricant:
- BSC072N08NS5ATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 74A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | TDSON | |
| Series | OptiMOS-TM5 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 7.2mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 24nC | |
| Forward Voltage Vf | 1.1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 69W | |
| Maximum Operating Temperature | 150°C | |
| Width | 6.1 mm | |
| Length | 5.35mm | |
| Height | 1.2mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 74A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type TDSON | ||
Series OptiMOS-TM5 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 7.2mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 24nC | ||
Forward Voltage Vf 1.1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 69W | ||
Maximum Operating Temperature 150°C | ||
Width 6.1 mm | ||
Length 5.35mm | ||
Height 1.2mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon design of MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.
Pb-free lead plating; RoHS compliant
Superior thermal resistance 100% avalanche tested
Halogen-free according to IEC61249-2-23
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