onsemi NTBGS Type N-Channel MOSFET, 342 A, 60 V Enhancement, 7-Pin TO-263
- N° de stock RS:
- 221-6695
- Référence fabricant:
- NTBGS001N06C
- Fabricant:
- onsemi
Actuellement indisponible
Nous ne savons pas si cet article sera de nouveau disponible. RS a l'intention de le retirer de son assortiment sous peu.
- N° de stock RS:
- 221-6695
- Référence fabricant:
- NTBGS001N06C
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 342A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | NTBGS | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 1.1mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 139nC | |
| Maximum Power Dissipation Pd | 245W | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.2mm | |
| Width | 4.7 mm | |
| Standards/Approvals | RoHS | |
| Height | 15.7mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 342A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series NTBGS | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 1.1mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 139nC | ||
Maximum Power Dissipation Pd 245W | ||
Maximum Operating Temperature 175°C | ||
Length 10.2mm | ||
Width 4.7 mm | ||
Standards/Approvals RoHS | ||
Height 15.7mm | ||
Automotive Standard No | ||
The ON Semiconductor 60V of power MOSFET used 342A of drain current with single N−channel. It has lower switching noise/EMI and minimize conduction losses.
Low RDS(on) to minimize conduction losses
Low capacitance to minimize driver losses
Liens connexes
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