Infineon HEXFET Type N-Channel MOSFET & Diode, 8.8 A, 30 V Enhancement, 8-Pin PQFN

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Actuellement indisponible
Désolés, nous ne savons pas quand ce produit sera réapprovisionné.
N° de stock RS:
220-7487
Référence fabricant:
IRFHS8342TRPBF
Fabricant:
Infineon
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Marque

Infineon

Product Type

MOSFET & Diode

Channel Type

Type N

Maximum Continuous Drain Current Id

8.8A

Maximum Drain Source Voltage Vds

30V

Series

HEXFET

Package Type

PQFN

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

16mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

8.7nC

Maximum Power Dissipation Pd

2.1W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1V

Maximum Operating Temperature

175°C

Length

2.1mm

Height

2.1mm

Width

1 mm

Standards/Approvals

Industrial Qualification, MSL1, RoHS

Automotive Standard

No

The Infineon IRFHS8342 is strong IRFET power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Industry standard surface-mount power package

Low RDS(on) in a small package

Small outline

Wide availability from distribution partners

Industry standard qualification level

Standard pinout allows for drop in replacement

High power density

Compact form factor for space critical applications

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