Infineon CoolMOS N-Channel MOSFET & Diode, 99.6 A, 650 V Enhancement, 3-Pin TO-247 IPW65R110CFDAFKSA1
- N° de stock RS:
- 220-7460
- Référence fabricant:
- IPW65R110CFDAFKSA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 tube de 30 unités)*
143,28 €
(TVA exclue)
173,37 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 120 unité(s) expédiée(s) à partir du 12 octobre 2026
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Unité | Prix par unité | le tube* |
|---|---|---|
| 30 - 30 | 4,776 € | 143,28 € |
| 60 - 120 | 4,537 € | 136,11 € |
| 150 + | 4,346 € | 130,38 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 220-7460
- Référence fabricant:
- IPW65R110CFDAFKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET & Diode | |
| Maximum Continuous Drain Current Id | 99.6A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | CoolMOS | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 110mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 277.8W | |
| Minimum Operating Temperature | -40°C | |
| Typical Gate Charge Qg @ Vgs | 118nC | |
| Forward Voltage Vf | 900mV | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 16.13mm | |
| Width | 5.21mm | |
| Height | 21.1mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type N | ||
Product Type MOSFET & Diode | ||
Maximum Continuous Drain Current Id 99.6A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series CoolMOS | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 110mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 277.8W | ||
Minimum Operating Temperature -40°C | ||
Typical Gate Charge Qg @ Vgs 118nC | ||
Forward Voltage Vf 900mV | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 16.13mm | ||
Width 5.21mm | ||
Height 21.1mm | ||
Automotive Standard No | ||
The Infineon 650V Cool MOS CFDA Super junction (SJ) MOSFET is Infineon's second generation of market leading automotive qualified high voltage Cool MOS power MOSFETs. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the 650V Cool MOS CFDA series provides also an integrated fast body diode.
First 650V automotive qualified technology with integrated fast body diode on the market
Limited voltage overshoot during hard commutation – self limiting di/dt and dv/dt
Low gate charge value Q g
Low Q rr at repetitive commutation on body diode & low Q oss
Reduced turn on and turn of delay times
Increased safety margin due to higher breakdown voltage
Reduced EMI appearance and easy to design in
Better light load efficiency
Lower switching losses
Higher switching frequency and/or higher duty cycle possible
High quality and reliability
Liens connexes
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