Infineon CoolMOS P7 Type N-Channel MOSFET & Diode, 78 A, 650 V Enhancement, 3-Pin TO-220 IPA60R120P7XKSA1
- N° de stock RS:
- 220-7368
- Référence fabricant:
- IPA60R120P7XKSA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 paquet de 5 unités)*
17,98 €
(TVA exclue)
21,755 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- 1 365 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 20 | 3,596 € | 17,98 € |
| 25 - 45 | 3,238 € | 16,19 € |
| 50 - 120 | 3,02 € | 15,10 € |
| 125 - 245 | 2,806 € | 14,03 € |
| 250 + | 2,624 € | 13,12 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 220-7368
- Référence fabricant:
- IPA60R120P7XKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET & Diode | |
| Maximum Continuous Drain Current Id | 78A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | CoolMOS P7 | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 120mΩ | |
| Channel Mode | Enhancement | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET & Diode | ||
Maximum Continuous Drain Current Id 78A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series CoolMOS P7 | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 120mΩ | ||
Channel Mode Enhancement | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon 600V Cool MOS P7 super junction MOSFET is the successor to the 600V Cool MOS P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the Cool MOS 7th generation platform ensure its high efficiency.
600V P7 enables excellent FOM RDS(on)xEoss and RDS(on)xQG
ESD ruggedness of ≥ 2kV (HBM class 2)
Integrated gate resistor RG
Rugged body diode
Wide portfolio in through hole and surface mount packages
Both standard grade and industrial grade parts are available
Excellent FOMs RDS(on)xQG / RDS(on)xEoss enable higher efficiency
Ease-of-use in manufacturing environments by stopping ESD failures occurring
Integrated RG reduces MOSFET oscillation sensitivity
MOSFET is suitable for both hard and resonant switching topologies such as PFC and LLC
Excellent ruggedness during hard commutation of the body diode seen in LLC topology
Suitable for a wide variety of end applications and output powers
Parts available suitable for consumer and industrial applications
Liens connexes
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