Infineon CoolMOS P7 Type N-Channel MOSFET, 206 A, 650 V Enhancement, 3-Pin TO-247 IPW60R045P7XKSA1
- N° de stock RS:
- 219-6023
- Référence fabricant:
- IPW60R045P7XKSA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 unité)*
6,72 €
(TVA exclue)
8,13 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
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- 357 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité |
|---|---|
| 1 - 9 | 6,72 € |
| 10 - 24 | 6,11 € |
| 25 - 49 | 5,71 € |
| 50 - 99 | 5,32 € |
| 100 + | 4,91 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 219-6023
- Référence fabricant:
- IPW60R045P7XKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 206A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | CoolMOS P7 | |
| Package Type | TO-247 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 45mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 90nC | |
| Forward Voltage Vf | 0.9V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 201W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 5.21mm | |
| Standards/Approvals | No | |
| Width | 21.1 mm | |
| Length | 16.13mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 206A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series CoolMOS P7 | ||
Package Type TO-247 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 45mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 90nC | ||
Forward Voltage Vf 0.9V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 201W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 5.21mm | ||
Standards/Approvals No | ||
Width 21.1 mm | ||
Length 16.13mm | ||
Automotive Standard No | ||
The Infineon 600V CoolMOS™ P7 superjunction MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the CoolMOS™ 7th generation platform ensure its high efficiency.
ESD ruggedness of ≥ 2kV (HBM class 2)
Integrated gate resistor RG
Rugged body diode
Wide portfolio in through hole and surface mount packages
Both standard grade and industrial grade parts are available
Liens connexes
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