Infineon CoolMOS P7 Type N-Channel MOSFET, 386 A, 650 V Enhancement, 3-Pin TO-247 IPW60R024P7XKSA1
- N° de stock RS:
- 219-6019
- Référence fabricant:
- IPW60R024P7XKSA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 unité)*
10,61 €
(TVA exclue)
12,84 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 269 unité(s) expédiée(s) à partir du 31 décembre 2025
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Unité | Prix par unité |
|---|---|
| 1 - 4 | 10,61 € |
| 5 - 9 | 9,76 € |
| 10 - 24 | 9,13 € |
| 25 - 49 | 8,49 € |
| 50 + | 7,85 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 219-6019
- Référence fabricant:
- IPW60R024P7XKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 386A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-247 | |
| Series | CoolMOS P7 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 24mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.9V | |
| Maximum Power Dissipation Pd | 291W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 164nC | |
| Maximum Operating Temperature | 150°C | |
| Width | 21.1 mm | |
| Standards/Approvals | No | |
| Length | 16.13mm | |
| Height | 5.21mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 386A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-247 | ||
Series CoolMOS P7 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 24mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.9V | ||
Maximum Power Dissipation Pd 291W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 164nC | ||
Maximum Operating Temperature 150°C | ||
Width 21.1 mm | ||
Standards/Approvals No | ||
Length 16.13mm | ||
Height 5.21mm | ||
Automotive Standard No | ||
The Infineon 600V CoolMOS P7 superjunction MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the CoolMOS™ 7th generation platform ensure its high efficiency.
600V P7 enables excellent FOM RDS(on)xEoss and RDS(on)xQG
Integrated gate resistor RG
Rugged body diode
Wide portfolio in through hole and surface mount packages
Both standard grade and industrial grade parts are available
Integrated RG reduces MOSFET oscillation sensitivity
MOSFET is suitable for both hard and resonant switching topologies such as PFC and LLC
Excellent ruggedness during hard commutation of the body diode seen in LLC topology
Suitable for a wide variety of end applications and output powers
Parts available suitable for consumer and industrial applications
Liens connexes
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