Références fabricant

Infineon CoolMOS P7 Type N-Channel MOSFET, 8 A, 800 V Enhancement, 3-Pin TO-252 IPD80R600P7ATMA1

N° de stock RS:: 219-5993
Référence fabricant:: IPD80R600P7ATMA1
Fabricant:: Infineon

Infineon CoolMOS P7 Type N-Channel MOSFET, 8 A, 800 V Enhancement, 3-Pin TO-252 IPD80R600P7ATMA1

Offre groupée disponible

Sous-total (1 paquet de 10 unités)*

13,60 €

(TVA exclue)

16,50 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 75,00 €

En stock

2 420 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution

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Unité	Prix par unité	le paquet*
10 - 40	1,36 €	13,60 €
50 - 90	1,292 €	12,92 €
100 - 240	1,237 €	12,37 €
250 - 490	1,182 €	11,82 €
500 +	1,101 €	11,01 €

*Prix donné à titre indicatif

N° de stock RS:: 219-5993
Référence fabricant:: IPD80R600P7ATMA1
Fabricant:: Infineon

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Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	8A
	Maximum Drain Source Voltage Vds	800V
	Series	CoolMOS P7
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	600mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	0.9V
	Maximum Power Dissipation Pd	60W
	Typical Gate Charge Qg @ Vgs	20nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	150°C
	Height	2.41mm
	Length	6.73mm
	Standards/Approvals	No
	Width	6.22 mm
	Automotive Standard	No

	Sélectionner tout
	Marque Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 8A
	Maximum Drain Source Voltage Vds 800V
	Series CoolMOS P7
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 600mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 0.9V
	Maximum Power Dissipation Pd 60W
	Typical Gate Charge Qg @ Vgs 20nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 150°C
	Height 2.41mm
	Length 6.73mm
	Standards/Approvals No
	Width 6.22 mm
	Automotive Standard No

Datasheet - IPD80R600P7ATMA1

The Infineon 800V CoolMOS P7 superjunction MOSFET series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on flyback applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power. This new product family offers up to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature compared to its predecessor as well as to competitor parts tested in typical flyback applications. It also enables higher power density designs through lower switching losses and better DPAK R DS(on) products. Overall, it helps customers save BOM cost and reduce assembly effort.

Easy to drive and to design-in

Better production yield by reducing ESD related failures

Less production issues and reduced field returns

Easy to select right parts for fine tuning of designs

Infineon CoolMOS P7 Type N-Channel MOSFET, 8 A, 800 V Enhancement, 3-Pin TO-252 IPD80R600P7ATMA1

Frais de livraison offerts pour toute commande de plus de 75,00 €

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