Infineon CoolMOS P7 Type N-Channel MOSFET, 7 A, 800 V Enhancement, 3-Pin TO-252 IPD80R750P7ATMA1
- N° de stock RS:
- 214-9053
- Référence fabricant:
- IPD80R750P7ATMA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 paquet de 15 unités)*
16,005 €
(TVA exclue)
19,365 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- 2 415 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 15 - 60 | 1,067 € | 16,01 € |
| 75 - 135 | 1,013 € | 15,20 € |
| 150 - 360 | 0,992 € | 14,88 € |
| 375 - 735 | 0,929 € | 13,94 € |
| 750 + | 0,865 € | 12,98 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 214-9053
- Référence fabricant:
- IPD80R750P7ATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 7A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | CoolMOS P7 | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 750mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 17nC | |
| Maximum Power Dissipation Pd | 51W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 0.9V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 2.41mm | |
| Standards/Approvals | No | |
| Length | 6.73mm | |
| Width | 6.22 mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 7A | ||
Maximum Drain Source Voltage Vds 800V | ||
Series CoolMOS P7 | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 750mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 17nC | ||
Maximum Power Dissipation Pd 51W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 0.9V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 2.41mm | ||
Standards/Approvals No | ||
Length 6.73mm | ||
Width 6.22 mm | ||
Automotive Standard No | ||
The Infineon latest 800V CoolMOS P7 series sets a new benchmark in 800V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon’s over 18 years pioneering super junction technology innovation. These are easy to drive and to parallel, enabling higher power density designs, BOM savings and lower assembly costs. These are recommended for hard and soft switching fly back topologies for LED Lighting, low power Chargers and Adapters, Audio, AUX power and Industrial power.
It comes with Fully optimized portfolio
Integrated Zener Diode ESD protection
Liens connexes
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