Infineon CoolMOS P7 Type N-Channel MOSFET, 6 A, 800 V Enhancement, 3-Pin TO-220 IPP80R900P7XKSA1

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20,74 €

(TVA exclue)

25,10 €

(TVA incluse)

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  • Plus 420 unité(s) expédiée(s) à partir du 13 avril 2026
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Prix par unité
le paquet*
20 +1,037 €20,74 €

*Prix donné à titre indicatif

Options de conditionnement :
N° de stock RS:
217-2572
Référence fabricant:
IPP80R900P7XKSA1
Fabricant:
Infineon
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Marque

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

6A

Maximum Drain Source Voltage Vds

800V

Package Type

TO-220

Series

CoolMOS P7

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

900mΩ

Channel Mode

Enhancement

Forward Voltage Vf

0.9V

Typical Gate Charge Qg @ Vgs

15nC

Maximum Power Dissipation Pd

45W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

10.36mm

Height

29.95mm

Standards/Approvals

No

Automotive Standard

No

The Infineon 800V CoolMOS™ P7 superjunction MOSFET series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on flyback applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power. This new product family offers up to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature compared to its predecessor as well as to competitor parts tested in typical flyback applications. It also enables higher power density designs through lower switching losses and better DPAK R DS(on) products. Overall, it helps customers save BOM cost and reduce assembly effort.

Best-in-class FOM R DS(on) * E oss; reduced Qg, C iss and C oss

Best-in-class DPAK R DS(on) of 280mΩ

Best-in-class V (GS)th of 3V and smallest V (GS)th variation of ± 0.5V

Integrated Zener diode ESD protection up to Class 2 (HBM)

Best-in-class quality and reliability

Fully optimized portfolio

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