STMicroelectronics STL260N N-Channel MOSFET, 120 A, 40 V, 8-Pin PowerFLAT
- N° de stock RS:
- 219-4229
- Référence fabricant:
- STL260N4LF7
- Fabricant:
- STMicroelectronics
Sous-total (1 bobine de 3000 unités)*
4 677,00 €
(TVA exclue)
5 658,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 01 avril 2027
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 3000 + | 1,559 € | 4 677,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 219-4229
- Référence fabricant:
- STL260N4LF7
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 120A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | STL260N | |
| Package Type | PowerFLAT | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 110mΩ | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 42nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 188W | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 175°C | |
| Length | 6mm | |
| Height | 1mm | |
| Standards/Approvals | No | |
| Width | 5mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 120A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series STL260N | ||
Package Type PowerFLAT | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 110mΩ | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 42nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 188W | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 175°C | ||
Length 6mm | ||
Height 1mm | ||
Standards/Approvals No | ||
Width 5mm | ||
Automotive Standard No | ||
The STMicroelectronics N-channel power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
Among the lowest RDS(on) on the market
Excellent FoM (figure of merit)
Low Crss/Ciss ratio for EMI immunity
High avalanche ruggedness
Liens connexes
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