STMicroelectronics Type N-Channel MOSFET, 2.5 A, 90 V, 5-Pin LBB RF3L05150CB4
- N° de stock RS:
- 218-4818
- Référence fabricant:
- RF3L05150CB4
- Fabricant:
- STMicroelectronics
Actuellement indisponible
Nous ne savons pas si cet article sera de nouveau disponible. RS a l'intention de le retirer de son assortiment sous peu.
- N° de stock RS:
- 218-4818
- Référence fabricant:
- RF3L05150CB4
- Fabricant:
- STMicroelectronics
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Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 2.5A | |
| Maximum Drain Source Voltage Vds | 90V | |
| Package Type | LBB | |
| Mount Type | Surface Mount | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 1Ω | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 2.5A | ||
Maximum Drain Source Voltage Vds 90V | ||
Package Type LBB | ||
Mount Type Surface Mount | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 1Ω | ||
The STMicroelectronics XXXx Is the state of the ART LDMOS FET designed for wide-band communication and ISM applications with frequencies from HF to 1 GHz. This product also finds application in 136-174 MHz commercial ground communication and 30-512 MHz Jammer, ground/air communication systems.
Has Integrated ESD Protection
Has High Efficiency and Linear Gain operations
Has European Directive 2002/95/EC Compliance