Infineon OptiMOS-T2 N-Channel MOSFET, 90 A, 100 V Enhancement, 3-Pin TO-252 IPD90N10S4L06ATMA1

N° de stock RS:: 218-3054
Référence fabricant:: IPD90N10S4L06ATMA1
Fabricant:: Infineon

Infineon OptiMOS-T2 N-Channel MOSFET, 90 A, 100 V Enhancement, 3-Pin TO-252 IPD90N10S4L06ATMA1

Sous-total (1 bobine de 2500 unités)*

1 967,50 €

(TVA exclue)

2 380,00 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

En stock

Plus 2 500 unité(s) expédiée(s) à partir du 12 octobre 2026

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Unité	Prix par unité	la bobine*
2500 +	0,787 €	1 967,50 €

*Prix donné à titre indicatif

N° de stock RS:: 218-3054
Référence fabricant:: IPD90N10S4L06ATMA1
Fabricant:: Infineon

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Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	90A
	Maximum Drain Source Voltage Vds	100V
	Package Type	TO-252
	Series	OptiMOS-T2
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	6.6mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	16V
	Maximum Power Dissipation Pd	136W
	Forward Voltage Vf	1.3V
	Typical Gate Charge Qg @ Vgs	75nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Length	6.73mm
	Height	2.41mm
	Standards/Approvals	No
	Width	6.22mm
	Automotive Standard	AEC-Q101

	Sélectionner tout
	Marque Infineon
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 90A
	Maximum Drain Source Voltage Vds 100V
	Package Type TO-252
	Series OptiMOS-T2
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 6.6mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 16V
	Maximum Power Dissipation Pd 136W
	Forward Voltage Vf 1.3V
	Typical Gate Charge Qg @ Vgs 75nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Length 6.73mm
	Height 2.41mm
	Standards/Approvals No
	Width 6.22mm
	Automotive Standard AEC-Q101

Datasheet - IPD90N10S4L06ATMA1

Infineon OptiMOS-T2 Series MOSFET, 100V Maximum Drain Source Voltage, 90A Maximum Continuous Drain Current - IPD90N10S4L06ATMA1

This MOSFET is a high-current N-channel enhancement device designed for power switching in demanding environments, including automotive applications. It operates across a wide temperature span and is intended for surface-mounted PCB assemblies where robust thermal and electrical performance are required.

Features and Benefits:

• Maximum drain-source voltage 100V enables high-voltage switching capability
• Continuous drain current 90A supports heavy current loads
• Low Rds(on) 6.6mΩ reduces conduction losses during operation
• Typical gate charge 75nC enables controlled switching transitions
• Maximum power dissipation 136W assists thermal management under load
• Maximum gate-source voltage 16V allows standard gate-drive voltages

Applications

• Suitable for power stages in automotive electronic control units
• Ideal for DC-DC converters requiring high current handling
• Used with motor drive circuits demanding low conduction loss
• Can be used for battery management and distribution systems
• Suited to surface-mount assemblies on Compact power boards

What temperature range can it tolerate in operation?

It functions across a wide ambient range from -55°C to 175°C.

What package and mounting type are provided for PCB assembly?

The device is supplied in a TO-252 package for surface mounting.

How many electrical connections does it present to a circuit?

It features three pins for gate, drain and source connections.

What channel type and mode define its conduction behaviour?

It uses an N-type channel operating in enhancement mode.

What are its physical footprint dimensions?

The package measures 6.73x6.22x2.41 mm for board-layout considerations.