Infineon IPN Type N-Channel MOSFET, 4.5 A, 800 V Enhancement, 3-Pin SOT-223 IPN80R1K2P7ATMA1
- N° de stock RS:
- 217-2553
- Référence fabricant:
- IPN80R1K2P7ATMA1
- Fabricant:
- Infineon
Sous-total (1 paquet de 20 unités)*
12,40 €
(TVA exclue)
15,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 2 920 unité(s) expédiée(s) à partir du 22 janvier 2026
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 20 + | 0,62 € | 12,40 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 217-2553
- Référence fabricant:
- IPN80R1K2P7ATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4.5A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | SOT-223 | |
| Series | IPN | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.2Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Forward Voltage Vf | 0.9V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 11nC | |
| Maximum Power Dissipation Pd | 6.8W | |
| Maximum Operating Temperature | 150°C | |
| Width | 3.7 mm | |
| Length | 6.7mm | |
| Height | 1.8mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4.5A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type SOT-223 | ||
Series IPN | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.2Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Forward Voltage Vf 0.9V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 11nC | ||
Maximum Power Dissipation Pd 6.8W | ||
Maximum Operating Temperature 150°C | ||
Width 3.7 mm | ||
Length 6.7mm | ||
Height 1.8mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon 800V CoolMOS™ P7 superjunction MOSFET series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on flyback applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power. This new product family offers up to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature compared to its predecessor as well as to competitor parts tested in typical flyback applications. It also enables higher power density designs through lower switching losses and better DPAK R DS(on) products. Overall, it helps customers save BOM cost and reduce assembly effort.
Best-in-class FOM R DS(on) * E oss; reduced Qg, C iss and C oss Best-in-class DPAK R DS(on) of 280mΩ
Best-in-class V (GS)th of 3V and smallest V (GS)th variation of ± 0.5V
Integrated Zener diode ESD protection up to Class 2 (HBM)
Best-in-class quality and reliability
Fully optimized portfolio
Liens connexes
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