Infineon IPN Type N-Channel MOSFET, 4.5 A, 800 V Enhancement, 3-Pin SOT-223 IPN80R1K2P7ATMA1

Voir l’ensemble des MOSFETs

Sous-total (1 paquet de 20 unités)*

12,40 €

(TVA exclue)

15,00 €

(TVA incluse)

Add to Basket
sélectionner ou taper la quantité
En stock
  • 2 920 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité
Prix par unité
le paquet*
20 +0,62 €12,40 €

*Prix donné à titre indicatif

Options de conditionnement :
N° de stock RS:
217-2553
Référence fabricant:
IPN80R1K2P7ATMA1
Fabricant:
Infineon
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout

Marque

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

4.5A

Maximum Drain Source Voltage Vds

800V

Package Type

SOT-223

Series

IPN

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.2Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

6.8W

Forward Voltage Vf

0.9V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

11nC

Maximum Operating Temperature

150°C

Width

3.7 mm

Length

6.7mm

Standards/Approvals

No

Height

1.8mm

Automotive Standard

No

The Infineon 800V CoolMOS™ P7 superjunction MOSFET series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on flyback applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power. This new product family offers up to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature compared to its predecessor as well as to competitor parts tested in typical flyback applications. It also enables higher power density designs through lower switching losses and better DPAK R DS(on) products. Overall, it helps customers save BOM cost and reduce assembly effort.

Best-in-class FOM R DS(on) * E oss; reduced Qg, C iss and C oss Best-in-class DPAK R DS(on) of 280mΩ

Best-in-class V (GS)th of 3V and smallest V (GS)th variation of ± 0.5V

Integrated Zener diode ESD protection up to Class 2 (HBM)

Best-in-class quality and reliability

Fully optimized portfolio

Liens connexes