Infineon CoolMOS Type N-Channel MOSFET, 24 A, 650 V Enhancement, 3-Pin TO-263 IPB65R095C7ATMA2
- N° de stock RS:
- 217-2506
- Référence fabricant:
- IPB65R095C7ATMA2
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 paquet de 5 unités)*
21,96 €
(TVA exclue)
26,57 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 225 unité(s) expédiée(s) à partir du 30 décembre 2025
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 5 | 4,392 € | 21,96 € |
| 10 - 20 | 3,996 € | 19,98 € |
| 25 - 45 | 3,734 € | 18,67 € |
| 50 - 120 | 3,47 € | 17,35 € |
| 125 + | 3,206 € | 16,03 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 217-2506
- Référence fabricant:
- IPB65R095C7ATMA2
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 24A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-263 | |
| Series | CoolMOS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 95mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 51nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.9V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 129W | |
| Maximum Operating Temperature | 150°C | |
| Height | 4.57mm | |
| Width | 9.45 mm | |
| Length | 10.31mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 24A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-263 | ||
Series CoolMOS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 95mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 51nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.9V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 129W | ||
Maximum Operating Temperature 150°C | ||
Height 4.57mm | ||
Width 9.45 mm | ||
Length 10.31mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction(SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C7 series combines thee experience of the leading SJ MOSFET supplier with high class innovation. The product portfolio provides all benefits off a switching super junction MOSFETs offering better efficiency, reduced gate charge, easy implementation and outstanding reliability.
Increased MOSFET dv/dt ruggedness
Better efficiency due to best in class FOMRDS(on)*Eoss and RDS(on)*Qg
Best in class RDS(on)/package
Easy to use/drive
Pb-free plating, halogen free mold compound
Qualified for industrial grade applications according to JEDEC(J-STD20 andJESD22)
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