Infineon CoolMOS Type N-Channel MOSFET, 7.6 A, 500 V N, 3-Pin TO-220
- N° de stock RS:
- 217-2493
- Référence fabricant:
- IPAN50R500CEXKSA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 tube de 50 unités)*
30,60 €
(TVA exclue)
37,05 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 400 unité(s) expédiée(s) à partir du 02 mars 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le tube* |
|---|---|---|
| 50 - 50 | 0,612 € | 30,60 € |
| 100 - 200 | 0,477 € | 23,85 € |
| 250 - 450 | 0,447 € | 22,35 € |
| 500 - 1200 | 0,416 € | 20,80 € |
| 1250 + | 0,386 € | 19,30 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 217-2493
- Référence fabricant:
- IPAN50R500CEXKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 7.6A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Series | CoolMOS | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 500mΩ | |
| Channel Mode | N | |
| Maximum Power Dissipation Pd | 28W | |
| Typical Gate Charge Qg @ Vgs | 18.7nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 0.85V | |
| Maximum Operating Temperature | 150°C | |
| Length | 16.1mm | |
| Width | 4.8 mm | |
| Height | 29.85mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 7.6A | ||
Maximum Drain Source Voltage Vds 500V | ||
Series CoolMOS | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 500mΩ | ||
Channel Mode N | ||
Maximum Power Dissipation Pd 28W | ||
Typical Gate Charge Qg @ Vgs 18.7nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 0.85V | ||
Maximum Operating Temperature 150°C | ||
Length 16.1mm | ||
Width 4.8 mm | ||
Height 29.85mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon 500V CoolMOS™ CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching superjunction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market.
Reduced energy stored in output capacitance (E oss)
High body diode ruggedness
Reduced reverse recovery charge (Q rr )
Reduced gate charge (Q g )
Liens connexes
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- Infineon 500V CoolMOS CE Type N-Channel MOSFET 500 V N, 3-Pin TO-220
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- Infineon CoolMOS CE Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-220
