Infineon P7 Type N-Channel MOSFET, 9 A, 950 V P, 3-Pin TO-220
- N° de stock RS:
- 217-2491
- Référence fabricant:
- IPA95R750P7XKSA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 tube de 50 unités)*
65,35 €
(TVA exclue)
79,05 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 400 unité(s) expédiée(s) à partir du 05 janvier 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le tube* |
|---|---|---|
| 50 - 50 | 1,307 € | 65,35 € |
| 100 - 200 | 1,059 € | 52,95 € |
| 250 - 450 | 0,98 € | 49,00 € |
| 500 - 950 | 0,928 € | 46,40 € |
| 1000 + | 0,85 € | 42,50 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 217-2491
- Référence fabricant:
- IPA95R750P7XKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 9A | |
| Maximum Drain Source Voltage Vds | 950V | |
| Package Type | TO-220 | |
| Series | P7 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 750mΩ | |
| Channel Mode | P | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 68W | |
| Forward Voltage Vf | 0.9V | |
| Typical Gate Charge Qg @ Vgs | 15.3nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 10.65mm | |
| Height | 29.75mm | |
| Width | 4.9 mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 9A | ||
Maximum Drain Source Voltage Vds 950V | ||
Package Type TO-220 | ||
Series P7 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 750mΩ | ||
Channel Mode P | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 68W | ||
Forward Voltage Vf 0.9V | ||
Typical Gate Charge Qg @ Vgs 15.3nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 10.65mm | ||
Height 29.75mm | ||
Width 4.9 mm | ||
Automotive Standard No | ||
The Infineon latest 950V CoolMOS™ P7 series sets a new bench mark in 950V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon’s over 18 years pioneering super junction technology innovation.
Best-in-class FOMRDS (on)*Eoss; reduced Qg, Ciss, and Coss
Best-in-class V(GS)th of 3V and smallest V(GS)th variation of ±0.5V
Integrated Zener Diode ESD protection
Best-in-class CoolMOS™ quality and reliability
Fully optimized portfolio
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