Infineon CoolMOS Type N-Channel MOSFET, 7.2 A, 650 V N, 3-Pin TO-220
- N° de stock RS:
- 217-2486
- Référence fabricant:
- IPA65R1K0CEXKSA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 tube de 50 unités)*
18,05 €
(TVA exclue)
21,85 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 650 unité(s) expédiée(s) à partir du 22 janvier 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le tube* |
|---|---|---|
| 50 - 50 | 0,361 € | 18,05 € |
| 100 - 200 | 0,351 € | 17,55 € |
| 250 - 450 | 0,342 € | 17,10 € |
| 500 - 1200 | 0,333 € | 16,65 € |
| 1250 + | 0,325 € | 16,25 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 217-2486
- Référence fabricant:
- IPA65R1K0CEXKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 7.2A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | CoolMOS | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1Ω | |
| Channel Mode | N | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 0.9V | |
| Maximum Power Dissipation Pd | 68W | |
| Typical Gate Charge Qg @ Vgs | 15.3nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 29.75mm | |
| Length | 10.65mm | |
| Standards/Approvals | No | |
| Width | 4.9 mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 7.2A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series CoolMOS | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1Ω | ||
Channel Mode N | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 0.9V | ||
Maximum Power Dissipation Pd 68W | ||
Typical Gate Charge Qg @ Vgs 15.3nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 29.75mm | ||
Length 10.65mm | ||
Standards/Approvals No | ||
Width 4.9 mm | ||
Automotive Standard No | ||
The Infineon CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction(SJ) principle and pioneered by Infineon Technologies. CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching Superjunction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market.
Extremely low losses due to very low FOMRds on*Qg and Eoss
Very high commutation ruggedness
Easy-to-use/drive
Pb-free plating, Halogen free mold compound
Qualified for standard grade applications
Liens connexes
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