Infineon HEXFET Type N-Channel MOSFET, 42 A, 55 V Enhancement, 3-Pin TO-252

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N° de stock RS:
215-2606
Référence fabricant:
IRLR2905TRLPBF
Fabricant:
Infineon
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Marque

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

42A

Maximum Drain Source Voltage Vds

55V

Package Type

TO-252

Series

HEXFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

27mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

110W

Typical Gate Charge Qg @ Vgs

48nC

Forward Voltage Vf

1.3V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Standards/Approvals

EIA-481, EIA-541

Automotive Standard

No

The Infineon HEXFET Power MOSFET series has 55V maximum drain source voltage it is a single N-Channel HEXFET Power MOSFET in a D-Pak package type. The Infineon series fifth generation HEXFET from International rectifier utilize advanced processing techniques to achieve extremely low on resistance for Silicon area. This benefits, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFET are well known for, providing sufficient level device for, provides designer with an extremely efficient and reliable device for use in a wide variety of applications. The D-pack is designed for surface mounting using vapour phase, infrared or wave soldering technique.

Advanced Process Technology

Ultra Low On-Resistance

Lead-Free

Fully avalanche rated

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