Infineon HEXFET Type N-Channel MOSFET, 42 A, 55 V Enhancement, 3-Pin TO-252 IRLR2905TRPBF
- N° de stock RS:
- 830-3357
- Référence fabricant:
- IRLR2905TRPBF
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 paquet de 20 unités)*
20,20 €
(TVA exclue)
24,40 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 440 unité(s) expédiée(s) à partir du 29 décembre 2025
- Plus 1 500 unité(s) expédiée(s) à partir du 05 janvier 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 20 - 20 | 1,01 € | 20,20 € |
| 40 - 80 | 0,788 € | 15,76 € |
| 100 - 180 | 0,738 € | 14,76 € |
| 200 - 480 | 0,687 € | 13,74 € |
| 500 + | 0,637 € | 12,74 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 830-3357
- Référence fabricant:
- IRLR2905TRPBF
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 42A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Package Type | TO-252 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 40mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 48nC | |
| Maximum Power Dissipation Pd | 110W | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Height | 2.39mm | |
| Width | 6.22 mm | |
| Standards/Approvals | No | |
| Length | 6.73mm | |
| Automotive Standard | No | |
| Distrelec Product Id | 304-44-477 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 42A | ||
Maximum Drain Source Voltage Vds 55V | ||
Package Type TO-252 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 40mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 48nC | ||
Maximum Power Dissipation Pd 110W | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Height 2.39mm | ||
Width 6.22 mm | ||
Standards/Approvals No | ||
Length 6.73mm | ||
Automotive Standard No | ||
Distrelec Product Id 304-44-477 | ||
N-Channel Power MOSFET 55V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Liens connexes
- Infineon HEXFET N-Channel MOSFET 55 V, 3-Pin DPAK IRLR2905TRPBF
- Infineon HEXFET N-Channel MOSFET 55 V, 3-Pin DPAK IRLR2905TRLPBF
- Infineon HEXFET Dual N-Channel MOSFET Transistor & Diode 55 V, 3-Pin DPAK IRFR1010ZTRPBF
- Infineon HEXFET N-Channel MOSFET 75 V DPAK IRFR2407TRPBF
- Infineon HEXFET N-Channel MOSFET 55 V DPAK IRLR3705ZTRPBF
- Infineon HEXFET N-Channel MOSFET 55 V DPAK IRFR2405TRLPBF
- Infineon HEXFET N-Channel MOSFET 40 V, 3-Pin DPAK IRFR4104TRLPBF
- Infineon HEXFET N-Channel MOSFET 55 V, 3-Pin DPAK IRFR1205TRPBF