Infineon StrongIRFET Type N-Channel MOSFET, 97 A, 100 V Enhancement, 3-Pin TO-262
- N° de stock RS:
- 215-2602
- Référence fabricant:
- IRFSL4410ZPBF
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 tube de 50 unités)*
106,75 €
(TVA exclue)
129,15 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Dernier stock RS
- 1 050 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution
Unité | Prix par unité | le tube* |
|---|---|---|
| 50 - 50 | 2,135 € | 106,75 € |
| 100 - 200 | 1,90 € | 95,00 € |
| 250 - 450 | 1,849 € | 92,45 € |
| 500 - 950 | 1,802 € | 90,10 € |
| 1000 + | 1,757 € | 87,85 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 215-2602
- Référence fabricant:
- IRFSL4410ZPBF
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 97A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | StrongIRFET | |
| Package Type | TO-262 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 9mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 120nC | |
| Maximum Power Dissipation Pd | 230W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 97A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series StrongIRFET | ||
Package Type TO-262 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 9mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 120nC | ||
Maximum Power Dissipation Pd 230W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon Strong IRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. It has applications such us high efficiency synchronous rectification in SMPS, uninterruptible power supply, high speed power switching, hard switched and high frequency circuits.
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Industry standard through-hole power package
High-current rating
Liens connexes
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- Infineon StrongIRFET Type N-Channel MOSFET 60 V Enhancement, 7-Pin TO-263
- Infineon StrongIRFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-263
- Infineon StrongIRFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-247