Infineon StrongIRFET Type N-Channel MOSFET, 240 A, 60 V Enhancement, 7-Pin TO-263

N° de stock RS:: 165-6501
Référence fabricant:: IRFS7534TRL7PP
Fabricant:: Infineon

Infineon StrongIRFET Type N-Channel MOSFET, 240 A, 60 V Enhancement, 7-Pin TO-263

Sous-total (1 bobine de 800 unités)*

1 309,60 €

(TVA exclue)

1 584,80 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 75,00 €

Temporairement en rupture de stock

Expédition à partir du 08 avril 2026

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Unité	Prix par unité	la bobine*
800 +	1,637 €	1 309,60 €

*Prix donné à titre indicatif

N° de stock RS:: 165-6501
Référence fabricant:: IRFS7534TRL7PP
Fabricant:: Infineon

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Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	240A
	Maximum Drain Source Voltage Vds	60V
	Series	StrongIRFET
	Package Type	TO-263
	Mount Type	Surface
	Pin Count	7
	Maximum Drain Source Resistance Rds	1.95mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.2V
	Typical Gate Charge Qg @ Vgs	200nC
	Maximum Power Dissipation Pd	290W
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Length	10.67mm
	Width	9.65 mm
	Height	4.83mm
	Automotive Standard	No

	Sélectionner tout
	Marque Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 240A
	Maximum Drain Source Voltage Vds 60V
	Series StrongIRFET
	Package Type TO-263
	Mount Type Surface
	Pin Count 7
	Maximum Drain Source Resistance Rds 1.95mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.2V
	Typical Gate Charge Qg @ Vgs 200nC
	Maximum Power Dissipation Pd 290W
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Length 10.67mm
	Width 9.65 mm
	Height 4.83mm
	Automotive Standard No

Infineon StrongIRFET Series MOSFET, 240A Maximum Continuous Drain Current, 290W Maximum Power Dissipation - IRFS7534TRL7PP

This MOSFET is designed for high-performance applications, offering reliability and efficiency. It significantly enhances the performance of various electronic systems, especially in power management and motor drive applications, and is suitable for diverse industries including automation and electronics.

Features & Benefits

• Low on-resistance minimises power losses

• Enhanced body diode capability boosts overall efficiency

• Continuous drain current capacity of 240A meets stringent requirements

• Versatile gate voltage threshold allows improved control

• Robust avalanche rating increases reliability

Applications

• Applicable in brushed and BLDC motor drive systems

• Suitable for battery-operated circuits

• Effective in half-bridge and full-bridge configurations

• Utilised in synchronous rectifier solutions

• Employed in DC/DC and AC/DC converters

What is the maximum temperature the component can operate at?

The component can operate at a maximum junction temperature of +175°C, enabling functionality in challenging environments without performance loss.

How does the MOSFET handle power dissipation?

It has a maximum power dissipation capability of 290W when mounted on suitable PCB configurations, ensuring consistent performance during operation.

What is the significance of the gate-to-source voltage rating?

The gate-to-source voltage rating of ±20V specifies the allowable voltages applied, ensuring safe operation across various applications.

Can this MOSFET be integrated into existing circuit designs?

Yes, it features standard D2PAK-7 packaging, making it compatible with a broad range of PCB designs and facilitating easy integration into current systems.