Infineon HEXFET Type N-Channel MOSFET, 35 A, 100 V Enhancement, 3-Pin TO-252 IRFR540ZTRPBF
- N° de stock RS:
- 215-2599
- Référence fabricant:
- IRFR540ZTRPBF
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 paquet de 20 unités)*
20,22 €
(TVA exclue)
24,46 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Dernier stock RS
- 1 720 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution
Unité | Prix par unité | le paquet* |
|---|---|---|
| 20 - 80 | 1,011 € | 20,22 € |
| 100 - 180 | 0,961 € | 19,22 € |
| 200 - 480 | 0,92 € | 18,40 € |
| 500 - 980 | 0,88 € | 17,60 € |
| 1000 + | 0,819 € | 16,38 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 215-2599
- Référence fabricant:
- IRFR540ZTRPBF
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 35A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-252 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 28.5mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 91W | |
| Typical Gate Charge Qg @ Vgs | 59nC | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 35A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-252 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 28.5mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 91W | ||
Typical Gate Charge Qg @ Vgs 59nC | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
This Infineon HEXFET® Power MOSFET utilizes the latest 35A ID processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
Advanced Process Technology
Ultra Low On-Resistance
Lead-Free and Halogen-Free
Liens connexes
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- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-252
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-252
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-252
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-252