Infineon 600V CoolMOS CFD7 Type N-Channel MOSFET, 13 A, 600 V Enhancement, 5-Pin ThinPAK IPL60R285P7AUMA1
- N° de stock RS:
- 215-2524
- Référence fabricant:
- IPL60R285P7AUMA1
- Fabricant:
- Infineon
Sous-total (1 paquet de 10 unités)*
10,08 €
(TVA exclue)
12,20 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 2 870 unité(s) expédiée(s) à partir du 13 avril 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 10 + | 1,008 € | 10,08 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 215-2524
- Référence fabricant:
- IPL60R285P7AUMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 13A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | 600V CoolMOS CFD7 | |
| Package Type | ThinPAK | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 285mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 59W | |
| Typical Gate Charge Qg @ Vgs | 18nC | |
| Forward Voltage Vf | 0.9V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 8.1mm | |
| Height | 8.1mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 13A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series 600V CoolMOS CFD7 | ||
Package Type ThinPAK | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 285mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 59W | ||
Typical Gate Charge Qg @ Vgs 18nC | ||
Forward Voltage Vf 0.9V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 8.1mm | ||
Height 8.1mm | ||
Automotive Standard No | ||
The Infineon 600V Cool MOS™ P7 is the successor to the 600V Cool MOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the Cool MOS™ 7th generation platform ensure its high efficiency. It combines the benefits of a fast switching SJ MOSFET with excellent ease of use, e.g. very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Furthermore, extremely low switching and conduction losses make switching application seven more efficient, more compact and much cooler.
Suitable for hard and soft switching (PFC and LLC) due to an outstanding commutation ruggedness
Excellent ESD robustness >2kV(HBM) for all products
Significant reduction of switching and conduction losses
Wide portfolio in through hole and surface mount packages
Liens connexes
- Infineon 600V CoolMOS CFD7 Type N-Channel MOSFET 600 V Enhancement, 5-Pin ThinPAK
- Infineon 600V CoolMOS CFD7 Type N-Channel MOSFET 650 V Enhancement, 5-Pin ThinPAK
- Infineon 600V CoolMOS CFD7 Type N-Channel MOSFET 650 V Enhancement, 5-Pin ThinPAK IPL60R185CFD7AUMA1
- Infineon 600V CoolMOS P7 Type N-Channel MOSFET 600 V Enhancement, 5-Pin ThinPAK
- Infineon 600V CoolMOS P7 Type N-Channel MOSFET 600 V Enhancement, 5-Pin ThinPAK IPL60R365P7AUMA1
- Infineon 600V CoolMOS CFD7 Type N-Channel MOSFET 600 V N, 3-Pin TO-220
- Infineon 600V CoolMOS CFD7 Type N-Channel MOSFET 600 V, 3-Pin TO-247
- Infineon 600V CoolMOS CFD7 Type N-Channel MOSFET 600 V, 3-Pin TO-247