Infineon CoolMOS CE Type N-Channel MOSFET, 37 A, 500 V Enhancement, 3-Pin TO-220 IPA60R080P7XKSA1

N° de stock RS:: 215-2477
Référence fabricant:: IPA60R080P7XKSA1
Fabricant:: Infineon

Infineon CoolMOS CE Type N-Channel MOSFET, 37 A, 500 V Enhancement, 3-Pin TO-220 IPA60R080P7XKSA1

Sous-total (1 paquet de 5 unités)*

25,40 €

(TVA exclue)

30,75 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

Temporairement en rupture de stock

Expédition à partir du 02 novembre 2026

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Unité	Prix par unité	le paquet*
5 +	5,08 €	25,40 €

*Prix donné à titre indicatif

N° de stock RS:: 215-2477
Référence fabricant:: IPA60R080P7XKSA1
Fabricant:: Infineon

Spécifications

Documentation technique

Législations et de normes

Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	37A
	Maximum Drain Source Voltage Vds	500V
	Series	CoolMOS CE
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	80mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20V
	Maximum Power Dissipation Pd	29W
	Typical Gate Charge Qg @ Vgs	51nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	0.9V
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Automotive Standard	No

	Sélectionner tout
	Marque Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 37A
	Maximum Drain Source Voltage Vds 500V
	Series CoolMOS CE
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 80mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20V
	Maximum Power Dissipation Pd 29W
	Typical Gate Charge Qg @ Vgs 51nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 0.9V
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Automotive Standard No

Datasheet - IPA60R080P7XKSA1

Infineon CoolMOS CE Series MOSFET, 500V Drain Source Voltage, 37A Continuous Drain Current - IPA60R080P7XKSA1

This n-channel MOSFET is a high-voltage switching transistor designed for power-conversion and control applications. It operates reliably across a wide temperature range and is supplied in a TO-220 through-hole package suitable for conventional assembly methods. The device is intended for use where robust drain-to-source voltage capability and moderate power dissipation are required.

Features and Benefits:

• 500V drain rating delivers strong high-voltage tolerance for converters
• 80mΩ Rds(on) enables lower conduction losses during load periods
• 37A continuous drain current supports substantial output capability
• 29W maximum dissipation allows sustained power handling in applications
• 51nC typical gate charge provides predictable switching energy demand
• 0.9V forward voltage reduces drop in diode conduction events

Applications

• Suitable for offline switch-mode power supplies
• Ideal for high-voltage DC-DC conversion stages
• Used with industrial motor drive front ends
• Can be used for inrush current limiting circuits
• Suitable for general-purpose power switching in lab rigs

What gate voltage limits must be observed during operation?

The device accepts gate-source voltages up to 20 V

designs should keep gate drive within this range to prevent gate-oxide stress.

How does temperature affect safe use in systems?

The component is rated to operate between -55 °C and 150 °C, so thermal management should ensure junction temperatures remain within this span for reliable service.

Which mounting approach is required for PCB integration?

It is provided in a TO-220 through-hole package, so it is intended for board mounting with mechanical fastening and appropriate heatsinking.

What switching behaviour should designers expect at high voltages?

With a typical gate charge of 51 nC, switching losses scale predictably

driver selection must handle this charge to achieve desired transition speeds.