Infineon StrongIRFET Type N-Channel MOSFET, 360 A, 40 V Enhancement, 7-Pin TO-263 IRF40SC240ARMA1
- N° de stock RS:
- 214-9123
- Référence fabricant:
- IRF40SC240ARMA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 paquet de 5 unités)*
21,57 €
(TVA exclue)
26,10 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 2 990 unité(s) expédiée(s) à partir du 05 janvier 2026
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 20 | 4,314 € | 21,57 € |
| 25 - 45 | 3,666 € | 18,33 € |
| 50 - 120 | 3,41 € | 17,05 € |
| 125 - 245 | 3,19 € | 15,95 € |
| 250 + | 2,934 € | 14,67 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 214-9123
- Référence fabricant:
- IRF40SC240ARMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 360A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-263 | |
| Series | StrongIRFET | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 0.65mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 366nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 417W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 4.4mm | |
| Length | 10.2mm | |
| Width | 9.45 mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 360A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-263 | ||
Series StrongIRFET | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 0.65mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 366nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 417W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 4.4mm | ||
Length 10.2mm | ||
Width 9.45 mm | ||
Automotive Standard No | ||
The Infineons latest 40 V Strong IRFET power MOSFET devices are optimized for both high current and low RDS(on) making them the ideal solution for high current battery powered applications. It offers design flexibility, with Industry standard packaging. It is capable of providing immunity to false turn-on in noisy environments.
It has 175°C operating temperature
High current carrying capability
Liens connexes
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