Infineon StrongIRFET N-Channel MOSFET, 195 A, 60 V Enhancement, 3-Pin TO-263 IRFS7534TRLPBF
- N° de stock RS:
- 820-8873
- Référence fabricant:
- IRFS7534TRLPBF
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 2 unités)*
5,52 €
(TVA exclue)
6,68 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 736 unité(s) expédiée(s) à partir du 21 septembre 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 2 - 18 | 2,76 € | 5,52 € |
| 20 - 48 | 2,54 € | 5,08 € |
| 50 - 98 | 2,38 € | 4,76 € |
| 100 - 198 | 2,21 € | 4,42 € |
| 200 + | 2,04 € | 4,08 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 820-8873
- Référence fabricant:
- IRFS7534TRLPBF
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 195A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | StrongIRFET | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2.4mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 186nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 294W | |
| Maximum Operating Temperature | 175°C | |
| Width | 9.65mm | |
| Standards/Approvals | No | |
| Height | 4.83mm | |
| Length | 10.67mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 195A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series StrongIRFET | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2.4mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 186nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 294W | ||
Maximum Operating Temperature 175°C | ||
Width 9.65mm | ||
Standards/Approvals No | ||
Height 4.83mm | ||
Length 10.67mm | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
Infineon StrongIRFET Series MOSFET, 195A Maximum Continuous Drain Current, 294W Maximum Power Dissipation - IRFS7534TRLPBF
This MOSFET is engineered for efficient power management in a range of electronic applications. With the Ability to handle continuous drain currents up to 195A and a drain-source voltage rating of 60V, it delivers effective performance for various tasks. Its capabilities in surface-mount configurations enhance circuit efficiency and reliAbility for professionals in automation and electronics.
Features & Benefits
• High current capacity supports demanding loads
• Low Rds(on) of 2.4mΩ improves energy efficiency
• Designed for high temperature operation up to +175°C
• Robust avalanche and dynamic dV/dt ruggedness for dependable operation
• Fully characterised capacitance facilitates accurate switching performance
Applications
• Suitable for brushed and BLDC motor drive circuits
• Effective for battery-powered and power converters
• Useful in half-bridge and full-bridge topologies for various designs
• Applicable in DC/AC inverters and resonant mode power supplies
• Ideal for redundant power switches in critical systems
How does this component handle thermal management?
It operates efficiently under high thermal conditions with a maximum temperature of +175°C.
What are the implications of the low Rds(on) value?
The low on-resistance minimises conduction losses, leading to enhanced efficiency in power distribution.
Can it be used in applications with variable load conditions?
Yes, its high current capacity and robust characteristics make it capable of managing fluctuating load conditions effectively.
What type of mounting is recommended for optimal performance?
Surface mount technology is suggested for efficient heat dissipation and Compact integration.
How does it perform under pulsed conditions?
It is capable of safely handling pulsed drain currents up to 944A, providing flexibility for transient situations without failure.
Liens connexes
- Infineon StrongIRFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-263
- Infineon StrongIRFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-247
- Infineon StrongIRFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220
- Infineon StrongIRFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-247 IRFP7530PBF
- Infineon StrongIRFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220 IRFB7530PBF
- Infineon StrongIRFET Type N-Channel MOSFET 60 V Enhancement, 7-Pin TO-263
- Infineon StrongIRFET Type N-Channel MOSFET 60 V Enhancement, 7-Pin TO-263 IRFS7530TRL7PP
- Infineon StrongIRFET Type N-Channel MOSFET 60 V Enhancement, 7-Pin TO-263 IRFS7534TRL7PP