Infineon StrongIRFET Type N-Channel MOSFET, 195 A, 60 V Enhancement, 3-Pin TO-263 IRFS7534TRLPBF

N° de stock RS:: 820-8873
Référence fabricant:: IRFS7534TRLPBF
Fabricant:: Infineon

Infineon StrongIRFET Type N-Channel MOSFET, 195 A, 60 V Enhancement, 3-Pin TO-263 IRFS7534TRLPBF

Offre groupée disponible

Sous-total (1 paquet de 2 unités)*

4,70 €

(TVA exclue)

5,68 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 75,00 €

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Plus 738 unité(s) expédiée(s) à partir du 05 janvier 2026

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Unité	Prix par unité	le paquet*
2 - 18	2,35 €	4,70 €
20 - 48	2,16 €	4,32 €
50 - 98	2,02 €	4,04 €
100 - 198	1,88 €	3,76 €
200 +	1,74 €	3,48 €

*Prix donné à titre indicatif

N° de stock RS:: 820-8873
Référence fabricant:: IRFS7534TRLPBF
Fabricant:: Infineon

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Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	195A
	Maximum Drain Source Voltage Vds	60V
	Series	StrongIRFET
	Package Type	TO-263
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	2.4mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.2V
	Typical Gate Charge Qg @ Vgs	186nC
	Maximum Power Dissipation Pd	294W
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	175°C
	Length	10.67mm
	Width	9.65 mm
	Height	4.83mm
	Standards/Approvals	No
	Automotive Standard	No

	Sélectionner tout
	Marque Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 195A
	Maximum Drain Source Voltage Vds 60V
	Series StrongIRFET
	Package Type TO-263
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 2.4mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.2V
	Typical Gate Charge Qg @ Vgs 186nC
	Maximum Power Dissipation Pd 294W
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 175°C
	Length 10.67mm
	Width 9.65 mm
	Height 4.83mm
	Standards/Approvals No
	Automotive Standard No

Pays d'origine :: CN

Infineon StrongIRFET Series MOSFET, 195A Maximum Continuous Drain Current, 294W Maximum Power Dissipation - IRFS7534TRLPBF

This MOSFET is engineered for efficient power management in a range of electronic applications. With the Ability to handle continuous drain currents up to 195A and a drain-source voltage rating of 60V, it delivers effective performance for various tasks. Its capabilities in surface-mount configurations enhance circuit efficiency and reliAbility for professionals in automation and electronics.

Features & Benefits

• High current capacity supports demanding loads

• Low Rds(on) of 2.4mΩ improves energy efficiency

• Designed for high temperature operation up to +175°C

• Robust avalanche and dynamic dV/dt ruggedness for dependable operation

• Fully characterised capacitance facilitates accurate switching performance

Applications

• Suitable for brushed and BLDC motor drive circuits

• Effective for battery-powered and power converters

• Useful in half-bridge and full-bridge topologies for various designs

• Applicable in DC/AC inverters and resonant mode power supplies

• Ideal for redundant power switches in critical systems

How does this component handle thermal management?

It operates efficiently under high thermal conditions with a maximum temperature of +175°C.

What are the implications of the low Rds(on) value?

The low on-resistance minimises conduction losses, leading to enhanced efficiency in power distribution.

Can it be used in applications with variable load conditions?

Yes, its high current capacity and robust characteristics make it capable of managing fluctuating load conditions effectively.

What type of mounting is recommended for optimal performance?

Surface mount technology is suggested for efficient heat dissipation and Compact integration.

How does it perform under pulsed conditions?

It is capable of safely handling pulsed drain currents up to 944A, providing flexibility for transient situations without failure.