Infineon CoolMOS C7 Type N-Channel MOSFET, 13 A, 600 V Enhancement, 3-Pin TO-247 IPW60R180C7XKSA1
- N° de stock RS:
- 214-9117
- Référence fabricant:
- IPW60R180C7XKSA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 paquet de 5 unités)*
7,57 €
(TVA exclue)
9,16 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 195 unité(s) expédiée(s) à partir du 13 avril 2026
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 20 | 1,514 € | 7,57 € |
| 25 - 45 | 1,474 € | 7,37 € |
| 50 - 120 | 1,432 € | 7,16 € |
| 125 - 245 | 1,396 € | 6,98 € |
| 250 + | 1,364 € | 6,82 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 214-9117
- Référence fabricant:
- IPW60R180C7XKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 13A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-247 | |
| Series | CoolMOS C7 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 180mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.9V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 24nC | |
| Maximum Power Dissipation Pd | 68W | |
| Standards/Approvals | No | |
| Height | 21.1mm | |
| Length | 16.13mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 13A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-247 | ||
Series CoolMOS C7 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 180mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.9V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 24nC | ||
Maximum Power Dissipation Pd 68W | ||
Standards/Approvals No | ||
Height 21.1mm | ||
Length 16.13mm | ||
Automotive Standard No | ||
The Infineon CoolMOS C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. These are Suitable for hard and soft switching functions. Suitable for applications such as server, telecom and solar.
Suitable for hard and soft switching
Qualified for industrial grade applications according to JEDEC
Liens connexes
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