Infineon OptiMOS Type N-Channel MOSFET, 13 A, 34 V Enhancement, 8-Pin TDSON
- N° de stock RS:
- 214-8978
- Référence fabricant:
- BSC0996NSATMA1
- Fabricant:
- Infineon
Sous-total (1 bobine de 5000 unités)*
1 240,00 €
(TVA exclue)
1 500,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 20 avril 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 5000 + | 0,248 € | 1 240,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 214-8978
- Référence fabricant:
- BSC0996NSATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 13A | |
| Maximum Drain Source Voltage Vds | 34V | |
| Package Type | TDSON | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 9mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 7.2nC | |
| Maximum Power Dissipation Pd | 2.5W | |
| Forward Voltage Vf | 1.1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.1mm | |
| Standards/Approvals | No | |
| Length | 5.49mm | |
| Width | 6.35 mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 13A | ||
Maximum Drain Source Voltage Vds 34V | ||
Package Type TDSON | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 9mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 7.2nC | ||
Maximum Power Dissipation Pd 2.5W | ||
Forward Voltage Vf 1.1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 1.1mm | ||
Standards/Approvals No | ||
Length 5.49mm | ||
Width 6.35 mm | ||
Automotive Standard No | ||
The Infineon range of OptiMOS products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
It comes with Improved switching behaviour
100% Avalanche tested
Liens connexes
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- Infineon OptiMOS Type N-Channel MOSFET 40 V Enhancement, 8-Pin TDSON
