Infineon OptiMOS 5 Type N-Channel MOSFET, 100 A, 30 V Enhancement, 8-Pin TDSON BSC0502NSIATMA1
- N° de stock RS:
- 214-8975
- Référence fabricant:
- BSC0502NSIATMA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 15 unités)*
16,305 €
(TVA exclue)
19,725 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- 14 970 unité(s) expédiée(s) à partir du 31 août 2026
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 15 - 60 | 1,087 € | 16,31 € |
| 75 - 135 | 1,031 € | 15,47 € |
| 150 - 360 | 0,989 € | 14,84 € |
| 375 - 735 | 0,945 € | 14,18 € |
| 750 + | 0,881 € | 13,22 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 214-8975
- Référence fabricant:
- BSC0502NSIATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | OptiMOS 5 | |
| Package Type | TDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 2.3mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 9nC | |
| Forward Voltage Vf | 0.65V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 43W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 1.1mm | |
| Length | 5.49mm | |
| Width | 6.35mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series OptiMOS 5 | ||
Package Type TDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 2.3mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 9nC | ||
Forward Voltage Vf 0.65V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 43W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 1.1mm | ||
Length 5.49mm | ||
Width 6.35mm | ||
Automotive Standard No | ||
The Infineon range of OptiMOS products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
Monolithic integrated Schottky-like diode
Optimized for high performance buck converters
100% avalanche tested
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