DiodesZetex Dual DMN53D0LDWQ 1 Type N-Channel MOSFET, 460 mA, 50 V Enhancement, 3-Pin SOT-363 DMN53D0LDWQ-7
- N° de stock RS:
- 213-9191
- Référence fabricant:
- DMN53D0LDWQ-7
- Fabricant:
- DiodesZetex
Sous-total (1 paquet de 50 unités)*
14,15 €
(TVA exclue)
17,10 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
- 5 950 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Unité | Prix par unité | le paquet* |
|---|---|---|
| 50 - 50 | 0,283 € | 14,15 € |
| 100 - 200 | 0,248 € | 12,40 € |
| 250 - 450 | 0,243 € | 12,15 € |
| 500 - 950 | 0,22 € | 11,00 € |
| 1000 + | 0,198 € | 9,90 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 213-9191
- Référence fabricant:
- DMN53D0LDWQ-7
- Fabricant:
- DiodesZetex
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 460mA | |
| Maximum Drain Source Voltage Vds | 50V | |
| Series | DMN53D0LDWQ | |
| Package Type | SOT-363 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.0016Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.8V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 0.6nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 310W | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Dual | |
| Height | 0.95mm | |
| Standards/Approvals | J-STD-020, RoHS, MIL-STD-202, UL 94V-0, AEC-Q101 | |
| Length | 2.15mm | |
| Width | 1.35 mm | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | AEC-Q200, AEC-Q100, AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 460mA | ||
Maximum Drain Source Voltage Vds 50V | ||
Series DMN53D0LDWQ | ||
Package Type SOT-363 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.0016Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.8V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 0.6nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 310W | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Dual | ||
Height 0.95mm | ||
Standards/Approvals J-STD-020, RoHS, MIL-STD-202, UL 94V-0, AEC-Q101 | ||
Length 2.15mm | ||
Width 1.35 mm | ||
Number of Elements per Chip 1 | ||
Automotive Standard AEC-Q200, AEC-Q100, AEC-Q101 | ||
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