Toshiba TK090Z65Z Type N-Channel MOSFET, 30 A, 650 V Enhancement, 4-Pin TO-247 TK090Z65Z,S1F(O

Indisponible
RS n'aura plus ce produit en stock.
N° de stock RS:
206-9727
Référence fabricant:
TK090Z65Z,S1F(O
Fabricant:
Toshiba
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Marque

Toshiba

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

30A

Maximum Drain Source Voltage Vds

650V

Series

TK090Z65Z

Package Type

TO-247

Mount Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance Rds

90mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

47nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

45W

Forward Voltage Vf

-1.7V

Maximum Operating Temperature

150°C

Length

40.96mm

Height

5mm

Width

15.94 mm

Standards/Approvals

No

Automotive Standard

No

The Toshiba silicon N-channel MOSFET having high-speed switching properties with lower capacitance. It is mainly used in switching power supplies.

Low drain-source on-resistance 0.075 ?

Storage temperature -55 to 150°C

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