STMicroelectronics STO67N60DM6 N-Channel MOSFET, 33 A, 600 V Enhancement, 3-Pin TO-220

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Sous-total (1 bobine de 1800 unités)*

7 817,40 €

(TVA exclue)

9 459,00 €

(TVA incluse)

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Prix par unité
la bobine*
1800 +4,343 €7 817,40 €

*Prix donné à titre indicatif

N° de stock RS:
206-6067
Référence fabricant:
STO67N60DM6
Fabricant:
STMicroelectronics
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Marque

STMicroelectronics

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

33A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-220

Series

STO67N60DM6

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

59mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

72.5nC

Forward Voltage Vf

1.6V

Maximum Gate Source Voltage Vgs

25V

Maximum Power Dissipation Pd

150W

Maximum Operating Temperature

150°C

Length

11.48mm

Standards/Approvals

No

Width

9.8mm

Height

2.2mm

Automotive Standard

No

The STMicroelectronics high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.

Fast-recovery body diode

Lower RDS(on) per area vs previous generation

Low gate charge, input capacitance and resistance

100% avalanche tested

Extremely high dv/dt ruggedness

Zener-protected

Excellent switching performance thanks to the extra driving source pin

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