STMicroelectronics MDmesh M5 Type N-Channel MOSFET, 33 A, 650 V Enhancement, 3-Pin TO-220 STP42N65M5
- N° de stock RS:
- 687-5201
- Référence fabricant:
- STP42N65M5
- Fabricant:
- STMicroelectronics
Offre groupée disponible
Sous-total (1 unité)*
8,13 €
(TVA exclue)
9,84 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- 48 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité |
|---|---|
| 1 - 4 | 8,13 € |
| 5 - 9 | 7,72 € |
| 10 - 24 | 6,96 € |
| 25 - 49 | 6,71 € |
| 50 + | 6,54 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 687-5201
- Référence fabricant:
- STP42N65M5
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 33A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-220 | |
| Series | MDmesh M5 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 79mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 190W | |
| Forward Voltage Vf | 1.5V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 100nC | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Maximum Operating Temperature | 150°C | |
| Width | 4.6 mm | |
| Length | 10.4mm | |
| Height | 9.15mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 33A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-220 | ||
Series MDmesh M5 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 79mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 190W | ||
Forward Voltage Vf 1.5V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 100nC | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Maximum Operating Temperature 150°C | ||
Width 4.6 mm | ||
Length 10.4mm | ||
Height 9.15mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
N-channel MDmesh™ M5 Series, STMicroelectronics
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
MOSFET Transistors, STMicroelectronics
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