onsemi NTB Type N-Channel MOSFET & Diode, 60 A, 100 V Enhancement, 3-Pin TO-263

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Sous-total (1 bobine de 800 unités)*

726,40 €

(TVA exclue)

879,20 €

(TVA incluse)

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Dernier stock RS
  • 800 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution
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Prix par unité
la bobine*
800 +0,908 €726,40 €

*Prix donné à titre indicatif

N° de stock RS:
205-2495
Référence fabricant:
NTBS9D0N10MC
Fabricant:
onsemi
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Marque

onsemi

Channel Type

Type N

Product Type

MOSFET & Diode

Maximum Continuous Drain Current Id

60A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-263

Series

NTB

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

9mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

68W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

23nC

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Height

4.6mm

Length

14.6mm

Width

9.6 mm

Automotive Standard

No

The ON Semiconductor single N-channel 100V MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

Continuous Drain Current rating is 60A

Drain to source on resistance rating is 9.0mohm

Low RDS(on) to minimize conduction losses

Optimized switching performance

Low QG and capacitance to minimize driver losses

Industry’s lowest Qrr and softest body-diode for superior low noise switching

Lowers switching noise/EMI

High efficiency with lower switching spike and EMI

Package type is D2PAK3

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