onsemi NTB N-Channel MOSFET & Diode, 60 A, 100 V Enhancement, 3-Pin TO-263
- N° de stock RS:
- 205-2495
- Référence fabricant:
- NTBS9D0N10MC
- Fabricant:
- onsemi
Sous-total (1 bobine de 800 unités)*
1 747,20 €
(TVA exclue)
2 114,40 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Dernier stock RS
- 800 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution
Unité | Prix par unité | la bobine* |
|---|---|---|
| 800 + | 2,184 € | 1 747,20 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 205-2495
- Référence fabricant:
- NTBS9D0N10MC
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Product Type | MOSFET & Diode | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | NTB | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 9mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 23nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 68W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 14.6mm | |
| Width | 9.6mm | |
| Height | 4.6mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Product Type MOSFET & Diode | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series NTB | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 9mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 23nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 68W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 14.6mm | ||
Width 9.6mm | ||
Height 4.6mm | ||
Automotive Standard No | ||
The ON Semiconductor single N-channel 100V MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
Continuous Drain Current rating is 60A
Drain to source on resistance rating is 9.0mohm
Low RDS(on) to minimize conduction losses
Optimized switching performance
Low QG and capacitance to minimize driver losses
Industry’s lowest Qrr and softest body-diode for superior low noise switching
Lowers switching noise/EMI
High efficiency with lower switching spike and EMI
Package type is D2PAK3
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