STMicroelectronics ST Type N-Channel MOSFET, 39 A, 600 V Depletion, 4-Pin TO-247 STW48N60M6-4
- N° de stock RS:
- 202-5543
- Référence fabricant:
- STW48N60M6-4
- Fabricant:
- STMicroelectronics
Offre groupée disponible
Sous-total (1 paquet de 2 unités)*
16,56 €
(TVA exclue)
20,04 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- 28 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 2 - 8 | 8,28 € | 16,56 € |
| 10 + | 6,275 € | 12,55 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 202-5543
- Référence fabricant:
- STW48N60M6-4
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 39A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-247 | |
| Series | ST | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 0.061Ω | |
| Channel Mode | Depletion | |
| Maximum Power Dissipation Pd | 250W | |
| Forward Voltage Vf | 1.6V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 57nC | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 15.9mm | |
| Height | 41.2mm | |
| Width | 5.1 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 39A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-247 | ||
Series ST | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 0.061Ω | ||
Channel Mode Depletion | ||
Maximum Power Dissipation Pd 250W | ||
Forward Voltage Vf 1.6V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 57nC | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Maximum Operating Temperature 150°C | ||
Length 15.9mm | ||
Height 41.2mm | ||
Width 5.1 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The STMicroelectronics new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology.
100% avalanche tested
Zener-protected
Liens connexes
- STMicroelectronics ST SiC N-Channel MOSFET Module 600 V Depletion, 4-Pin TO-247-4 STW48N60M6-4
- STMicroelectronics ST SiC N-Channel MOSFET Module 600 V Depletion, 4-Pin TO-247-4 STW70N60DM6-4
- STMicroelectronics ST SiC N-Channel MOSFET Module 600 V Depletion, 3-Pin TO-247 STWA67N60M6
- STMicroelectronics ST SiC N-Channel MOSFET Module 650 V Depletion, 3-Pin TO-247 STW70N65DM6-4
- STMicroelectronics ST SiC N-Channel MOSFET Module 650 V Depletion, 3-Pin TO-247 STWA70N65DM6
- STMicroelectronics ST SiC N-Channel MOSFET Module 650 V Depletion, 3-Pin TO-247 STW70N65DM6
- STMicroelectronics ST SiC N-Channel MOSFET Module 600 V Depletion, 3-Pin D2PAK STB33N60DM6
- STMicroelectronics ST SiC N-Channel MOSFET Module 600 V Depletion, 3-Pin TO-220FP STF22N60M6