STMicroelectronics ST Type N-Channel MOSFET, 68 A, 650 V Depletion, 3-Pin TO-247 STW70N65DM6
- N° de stock RS:
- 202-5547
- Référence fabricant:
- STW70N65DM6
- Fabricant:
- STMicroelectronics
Offre groupée disponible
Sous-total (1 unité)*
12,97 €
(TVA exclue)
15,69 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- 442 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité |
|---|---|
| 1 - 4 | 12,97 € |
| 5 - 9 | 11,18 € |
| 10 + | 10,46 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 202-5547
- Référence fabricant:
- STW70N65DM6
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 68A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | ST | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.036Ω | |
| Channel Mode | Depletion | |
| Maximum Power Dissipation Pd | 450W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 125nC | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Forward Voltage Vf | 1.6V | |
| Maximum Operating Temperature | 150°C | |
| Length | 15.9mm | |
| Standards/Approvals | No | |
| Height | 41.2mm | |
| Width | 5.1 mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 68A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series ST | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.036Ω | ||
Channel Mode Depletion | ||
Maximum Power Dissipation Pd 450W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 125nC | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Forward Voltage Vf 1.6V | ||
Maximum Operating Temperature 150°C | ||
Length 15.9mm | ||
Standards/Approvals No | ||
Height 41.2mm | ||
Width 5.1 mm | ||
Automotive Standard No | ||
The STMicroelectronics N-channel Power MOSFET is part of the MDmesh™ DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market.
100% avalanche tested
Zener-protected
Liens connexes
- STMicroelectronics ST SiC N-Channel MOSFET Module 650 V Depletion, 3-Pin TO-247 STW70N65DM6
- STMicroelectronics ST SiC N-Channel MOSFET Module 650 V Depletion, 3-Pin TO-247 STW70N65DM6-4
- STMicroelectronics ST SiC N-Channel MOSFET Module 650 V Depletion, 3-Pin TO-247 STWA70N65DM6
- STMicroelectronics ST SiC N-Channel MOSFET Module 600 V Depletion, 3-Pin TO-247 STWA67N60M6
- STMicroelectronics ST SiC N-Channel MOSFET Module 600 V Depletion, 4-Pin TO-247-4 STW70N60DM6-4
- STMicroelectronics ST SiC N-Channel MOSFET Module 600 V Depletion, 4-Pin TO-247-4 STW48N60M6-4
- STMicroelectronics SCT SiC N-Channel MOSFET Module 650 V Depletion, 3-Pin HiP247 SCTW35N65G2VAG
- STMicroelectronics ST SiC N-Channel MOSFET Module 600 V Depletion, 3-Pin D2PAK STB33N60DM6