STMicroelectronics SCT N-Channel MOSFET Modules, 45 A, 1.2 kV Depletion, 3-Pin Hip-247 SCTWA30N120
- N° de stock RS:
- 202-5494
- Référence fabricant:
- SCTWA30N120
- Fabricant:
- STMicroelectronics
Actuellement indisponible
Nous ne savons pas si cet article sera de nouveau disponible. RS a l'intention de le retirer de son assortiment sous peu.
- N° de stock RS:
- 202-5494
- Référence fabricant:
- SCTWA30N120
- Fabricant:
- STMicroelectronics
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Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Series | SCT | |
| Channel Type | N | |
| Product Type | MOSFET Modules | |
| Maximum Continuous Drain Current (Id) | 45 A | |
| Maximum Drain Source Voltage (Vds) | 1.2 kV | |
| Channel Mode | Depletion | |
| Pin Count | 3 | |
| Package Type | Hip-247 | |
| Maximum Drain Source Resistance (Rds) | 0.09 Ω | |
| Mount Type | Through Hole | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Series SCT | ||
Channel Type N | ||
Product Type MOSFET Modules | ||
Maximum Continuous Drain Current (Id) 45 A | ||
Maximum Drain Source Voltage (Vds) 1.2 kV | ||
Channel Mode Depletion | ||
Pin Count 3 | ||
Package Type Hip-247 | ||
Maximum Drain Source Resistance (Rds) 0.09 Ω | ||
Mount Type Through Hole | ||
The STMicroelectronics silicon carbide power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature.
Very fast and robust intrinsic body diode
Low capacitance
Liens connexes
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