onsemi Dual 2 Type N-Channel Power MOSFET, 74 A, 80 V Enhancement, 8-Pin DFN
- N° de stock RS:
- 195-2670
- Référence fabricant:
- NVMFD6H840NLWFT1G
- Fabricant:
- onsemi
Sous-total (1 bobine de 1500 unités)*
1 848,00 €
(TVA exclue)
2 236,50 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 11 janvier 2027
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 1500 + | 1,232 € | 1 848,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 195-2670
- Référence fabricant:
- NVMFD6H840NLWFT1G
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 74A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | DFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 8.8mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 32nC | |
| Minimum Operating Temperature | 175°C | |
| Forward Voltage Vf | 0.8V | |
| Maximum Power Dissipation Pd | 3.1W | |
| Maximum Operating Temperature | -55°C | |
| Transistor Configuration | Dual | |
| Height | 1.05mm | |
| Standards/Approvals | No | |
| Length | 6.1mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 74A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type DFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 8.8mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 32nC | ||
Minimum Operating Temperature 175°C | ||
Forward Voltage Vf 0.8V | ||
Maximum Power Dissipation Pd 3.1W | ||
Maximum Operating Temperature -55°C | ||
Transistor Configuration Dual | ||
Height 1.05mm | ||
Standards/Approvals No | ||
Length 6.1mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
Automotive Power MOSFET in a 3x3mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. MOSFET and PPAP capable suitable for automotive applications.
Small Footprint (5x6 mm)
Compact Design
Low RDS(on)
Minimize Conduction Losses
Low QG and Capacitance
Minimize Driver Losses
NVMFS5C410NLWF − Wettable Flank Option
Enhanced Optical Inspection
PPAP Capable
Application
Reverser Battery protection
Switching power supplies
Power switches (High Side Driver, Low Side Driver, H-Bridges etc.)
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