onsemi Type N-Channel MOSFET, 313 A, 40 V Enhancement, 8-Pin DFN
- N° de stock RS:
- 195-2663
- Référence fabricant:
- NTMFSC0D9N04CL
- Fabricant:
- onsemi
Sous-total (1 bobine de 3000 unités)*
2 283,00 €
(TVA exclue)
2 763,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 02 juin 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 3000 + | 0,761 € | 2 283,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 195-2663
- Référence fabricant:
- NTMFSC0D9N04CL
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 313A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | DFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 850μΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 143nC | |
| Maximum Power Dissipation Pd | 167W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.95mm | |
| Standards/Approvals | No | |
| Width | 5 mm | |
| Length | 5.9mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 313A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type DFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 850μΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 143nC | ||
Maximum Power Dissipation Pd 167W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 0.95mm | ||
Standards/Approvals No | ||
Width 5 mm | ||
Length 5.9mm | ||
Automotive Standard No | ||
This N-Channel MOSFET is produced using ON Semiconductor’s advanced Power Trench® process. Advancements in both silicon and Dual Cool™ package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.
Top and bottom sided exposed in standard 5x6mm pin-out
Improved thermal dissipation through top and bottom side of the package
Ultra low RDS-on
Reduced conduction loss
Reduced capacitances and package inductance
Reduced switching loss
Application
Synchronous Rectifier in AC-DC and DC-DC power supplies
Motor Switch
Load switch
Liens connexes
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