Vishay E Type N-Channel Power MOSFET, 12 A, 600 V Enhancement, 3-Pin TO-220 SIHA100N60E-GE3
- N° de stock RS:
- 188-4970
- Référence fabricant:
- SIHA100N60E-GE3
- Fabricant:
- Vishay
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 2 unités)*
10,15 €
(TVA exclue)
12,282 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 2 - 18 | 5,075 € | 10,15 € |
| 20 - 48 | 4,57 € | 9,14 € |
| 50 - 98 | 4,33 € | 8,66 € |
| 100 - 198 | 4,06 € | 8,12 € |
| 200 + | 3,81 € | 7,62 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 188-4970
- Référence fabricant:
- SIHA100N60E-GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-220 | |
| Series | E | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.1Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 33nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Power Dissipation Pd | 35W | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.3mm | |
| Width | 4.7mm | |
| Height | 15.3mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-220 | ||
Series E | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.1Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 33nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Power Dissipation Pd 35W | ||
Maximum Operating Temperature 150°C | ||
Length 10.3mm | ||
Width 4.7mm | ||
Height 15.3mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Vishay Series E Power MOSFET, 600V Maximum Drain Source Voltage, 12A Maximum Continuous Drain Current - SIHA100N60E-GE3
This power MOSFET is a high-voltage N‑channel enhancement device designed for switch and power-conversion duties in through‑hole assemblies. It operates across a broad temperature range suited to demanding environments and is intended for applications requiring substantial drain current and elevated drain‑to‑source voltage handling while using a TO‑220 package for conventional mounting.
Features and Benefits:
• 600V drain capability enables high-voltage switching applications
• 12A continuous drain current supports substantial load currents
• 0.1Ω Rds(on) reduces conduction losses in power circuits
• 35W dissipation allows sustained power handling in ambient cooling
• 33nC typical gate charge permits controlled gate drive energy
• 30V maximum gate drive ensures robust gate overdrive margin
• 12A continuous drain current supports substantial load currents
• 0.1Ω Rds(on) reduces conduction losses in power circuits
• 35W dissipation allows sustained power handling in ambient cooling
• 33nC typical gate charge permits controlled gate drive energy
• 30V maximum gate drive ensures robust gate overdrive margin
Applications
• Suitable for mains‑linked switch‑mode power supplies
• Ideal for high-voltage motor inverter stages
• Used with discrete boost converter topologies
• Can be used for industrial battery charging systems
• Suitable for power-factor correction front ends
• Ideal for high-voltage motor inverter stages
• Used with discrete boost converter topologies
• Can be used for industrial battery charging systems
• Suitable for power-factor correction front ends
What are the thermal limits for continuous use?
The device can operate between -55°C and 150°C, enabling deployment in both low-temperature and high-temperature environments with appropriate thermal management.
Which packaging and mounting approach does it use?
It is supplied in a TO‑220 case intended for through‑hole mounting, facilitating heatsink attachment and reliable mechanical fixation.
What gate-drive constraints must be observed?
The gate‑to‑source voltage must not exceed 30V, so gate drivers should be selected to keep Vgs within this limit during switching transients.
How does the forward voltage affect circuit design?
With a forward voltage of 1.2V, designers should account for this drop when calculating conduction losses and thermal loading in series or synchronous configurations.
Liens connexes
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