Vishay E Type N-Channel MOSFET, 40 A, 600 V Enhancement, 4-Pin TO-220 SIHP065N60E-GE3

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N° de stock RS:
134-9709
Référence fabricant:
SIHP065N60E-GE3
Fabricant:
Vishay
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Marque

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

40A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-220

Series

E

Mount Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance Rds

65mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

49nC

Maximum Power Dissipation Pd

250W

Maximum Gate Source Voltage Vgs

30 V

Maximum Operating Temperature

150°C

Width

4.65 mm

Length

10.51mm

Standards/Approvals

No

Height

15.49mm

Automotive Standard

No

N-Channel MOSFET, E Series, Low Figure-of-Merit, Vishay Semiconductor


The E Series Power MOSFETs from Vishay are high-voltage transistors featuring ultra-low maximum on-resistance, low figure of merit and fast switching. They are available in a wide range of current ratings. Typical applications include servers and telecom power supplies, LED lighting, flyback converters, power factor correction (PFC) and switch mode power supplies (SMPS).

Features


Low figure-of-merit (FOM) RDS(on) x Qg

Low input capacitance (Ciss)

Low on-resistance (RDS(on))

Ultra-low gate charge (Qg)

Fast switching

Reduced switching and conduction losses

MOSFET Transistors, Vishay Semiconductor


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