onsemi SuperFET III MOSFET Easy-drive Type N-Channel MOSFET, 44 A, 650 V Enhancement, 3-Pin TO-247 NVHL072N65S3
- N° de stock RS:
- 186-1537
- Référence fabricant:
- NVHL072N65S3
- Fabricant:
- onsemi
Offre groupée disponible
Sous-total (1 paquet de 2 unités)*
10,80 €
(TVA exclue)
13,06 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 27 avril 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 2 - 18 | 5,40 € | 10,80 € |
| 20 - 198 | 4,655 € | 9,31 € |
| 200 + | 4,04 € | 8,08 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 186-1537
- Référence fabricant:
- NVHL072N65S3
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 44A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-247 | |
| Series | SuperFET III MOSFET Easy-drive | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 107mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 82nC | |
| Maximum Power Dissipation Pd | 312W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Operating Temperature | 150°C | |
| Width | 4.82 mm | |
| Length | 15.87mm | |
| Height | 20.82mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 44A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-247 | ||
Series SuperFET III MOSFET Easy-drive | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 107mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 82nC | ||
Maximum Power Dissipation Pd 312W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Operating Temperature 150°C | ||
Width 4.82 mm | ||
Length 15.87mm | ||
Height 20.82mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation.
700 V @ TJ = 150°C
Ultra Low Gate Charge (Typ. Qg = 78 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 715 pF)
PPAP Capable
Typ. RDS(on) = 63 mΩ
Higher system reliability at low temperature operation
Lower switching loss
PPAP Capable
Applications
HV DC/DC converter
End Products
On Board Charger
DC/DC Converter
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