onsemi NVTFS6H888N Type N-Channel MOSFET, 12 A, 80 V Enhancement, 8-Pin WDFN NVTFS6H888NTAG

Pénurie d'approvisionnement
En raison d'une pénurie d'approvisionnement mondial, nous ne savons pas quand ce produit sera à nouveau en stock.
Options de conditionnement :
N° de stock RS:
185-9125
Référence fabricant:
NVTFS6H888NTAG
Fabricant:
onsemi
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Marque

onsemi

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

12A

Maximum Drain Source Voltage Vds

80V

Series

NVTFS6H888N

Package Type

WDFN

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

55mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

4.7nC

Maximum Power Dissipation Pd

18W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Height

0.75mm

Width

3.15 mm

Length

3.15mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

Non conforme

Pays d'origine :
MY
Automotive Power MOSFET in a 3x3mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. MOSFET and PPAP capable suitable for automotive applications.

Small Footprint (3.3 x 3.3 mm)

Low On-Resistance

Low Capacitance

NVTFS6H850NWF − Wettable Flanks Product

PPAP Capable

Compact Design

Minimizes Conduction Losses

Minimize Driver Losses

Enhanced Optical Inspection

Suitable for Automotive Applications

Applications

Reverser Battery protection

Power switches (High Side Driver, Low Side Driver, H-Bridges etc.)

Switching power supplies

End Products

Solenoid Driver – ABS, Fuel injection

Motor Control – EPS, Wipers, Fans, Seats, etc.

Load Switch – ECU, Chassis, Body

Liens connexes