onsemi NVTFS6H888N Type N-Channel MOSFET, 12 A, 80 V Enhancement, 8-Pin WDFN

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Pénurie d'approvisionnement
En raison d'une pénurie d'approvisionnement mondial, nous ne savons pas quand ce produit sera à nouveau en stock.
N° de stock RS:
185-8164
Référence fabricant:
NVTFS6H888NTAG
Fabricant:
onsemi
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Marque

onsemi

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

12A

Maximum Drain Source Voltage Vds

80V

Package Type

WDFN

Series

NVTFS6H888N

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

55mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

4.7nC

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

18W

Maximum Operating Temperature

175°C

Width

3.15 mm

Length

3.15mm

Height

0.75mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

Non conforme

Pays d'origine :
MY
Automotive Power MOSFET in a 3x3mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. MOSFET and PPAP capable suitable for automotive applications.

Small Footprint (3.3 x 3.3 mm)

Low On-Resistance

Low Capacitance

NVTFS6H850NWF − Wettable Flanks Product

PPAP Capable

Compact Design

Minimizes Conduction Losses

Minimize Driver Losses

Enhanced Optical Inspection

Suitable for Automotive Applications

Applications

Reverser Battery protection

Power switches (High Side Driver, Low Side Driver, H-Bridges etc.)

Switching power supplies

End Products

Solenoid Driver – ABS, Fuel injection

Motor Control – EPS, Wipers, Fans, Seats, etc.

Load Switch – ECU, Chassis, Body

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