onsemi NVMFS5C673NL Type N-Channel MOSFET, 50 A, 60 V Enhancement, 5-Pin DFN NVMFS5C673NLWFAFT1G
- N° de stock RS:
- 171-8397
- Référence fabricant:
- NVMFS5C673NLWFAFT1G
- Fabricant:
- onsemi
Offre groupée disponible
Sous-total (1 paquet de 20 unités)*
20,60 €
(TVA exclue)
25,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Dernier stock RS
- 1 060 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution
Unité | Prix par unité | le paquet* |
|---|---|---|
| 20 - 180 | 1,03 € | 20,60 € |
| 200 - 480 | 0,888 € | 17,76 € |
| 500 + | 0,769 € | 15,38 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 171-8397
- Référence fabricant:
- NVMFS5C673NLWFAFT1G
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | NVMFS5C673NL | |
| Package Type | DFN | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 13mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 46W | |
| Typical Gate Charge Qg @ Vgs | 9.5nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.9V | |
| Maximum Operating Temperature | 175°C | |
| Width | 5.1 mm | |
| Height | 1.05mm | |
| Standards/Approvals | No | |
| Length | 6.1mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series NVMFS5C673NL | ||
Package Type DFN | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 13mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 46W | ||
Typical Gate Charge Qg @ Vgs 9.5nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.9V | ||
Maximum Operating Temperature 175°C | ||
Width 5.1 mm | ||
Height 1.05mm | ||
Standards/Approvals No | ||
Length 6.1mm | ||
Automotive Standard AEC-Q101 | ||
Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. PPAP capable suitable for automotive applications.
Low RDS(on)
Minimize Conduction Losses
Low QG and Gate capacitance
Minimize Switching Losses
Industry standard 5x6mm package Industry
Compact Design and Standard footprint for direct drop-in
Best in-class FOM (RDS(ON) x QG)
Increased efficiency, lower power dissipation
Reverser Battery protection
Switching power supplies
Power switches (High Side Driver, Low Side Driver, H-Bridges etc.)
a Solenoid Driver – ABS, Fuel injection
Motor Control – EPS, Wipers, Fans, Seats, etc.
Load Switch – ECU, Chassis, Body
Liens connexes
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