onsemi Dual 2 Type N-Channel Small Signal, 910 mA, 20 V Enhancement, 6-Pin SC-88 NTJD4401NT1G
- N° de stock RS:
- 184-1229
- Référence fabricant:
- NTJD4401NT1G
- Fabricant:
- onsemi
Offre groupée disponible
Sous-total (1 paquet de 100 unités)*
16,40 €
(TVA exclue)
19,80 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- 3 500 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 100 - 400 | 0,164 € | 16,40 € |
| 500 - 900 | 0,142 € | 14,20 € |
| 1000 + | 0,123 € | 12,30 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 184-1229
- Référence fabricant:
- NTJD4401NT1G
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Product Type | Small Signal | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 910mA | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SC-88 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 440mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | 150°C | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Maximum Power Dissipation Pd | 550mW | |
| Forward Voltage Vf | 0.76V | |
| Typical Gate Charge Qg @ Vgs | 1.3nC | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | -55°C | |
| Length | 2.2mm | |
| Height | 1mm | |
| Standards/Approvals | No | |
| Width | 1.35 mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Product Type Small Signal | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 910mA | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SC-88 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 440mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature 150°C | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Maximum Power Dissipation Pd 550mW | ||
Forward Voltage Vf 0.76V | ||
Typical Gate Charge Qg @ Vgs 1.3nC | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature -55°C | ||
Length 2.2mm | ||
Height 1mm | ||
Standards/Approvals No | ||
Width 1.35 mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
- Pays d'origine :
- CN
This N-Channel dual device was designed with a small footprint package (2x2 mm) with ON Semiconductor's leading planar process for small footprint and increased efficiency. The low figure of merit is particularly suited for single or dual cell Li-Ion battery supplied devices such as cell phones, media players, digital cameras, and PDAs.
Small Footprint (2 x 2 mm)
Low Gate Charge N-Channel Device
ESD Protected Gate
Same Package as SC-70 (6 Leads)
Applications:
Load Power Switching
Li-Ion Battery Supplied Devices
DC-DC Conversion
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