onsemi Dual 2 Type N-Channel Small Signal, 910 mA, 20 V Enhancement, 6-Pin SC-88
- N° de stock RS:
- 184-1064
- Référence fabricant:
- NTJD4401NT1G
- Fabricant:
- onsemi
Sous-total (1 bobine de 3000 unités)*
279,00 €
(TVA exclue)
339,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 26 mai 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 3000 + | 0,093 € | 279,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 184-1064
- Référence fabricant:
- NTJD4401NT1G
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Channel Type | Type N | |
| Product Type | Small Signal | |
| Maximum Continuous Drain Current Id | 910mA | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SC-88 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 440mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.76V | |
| Typical Gate Charge Qg @ Vgs | 1.3nC | |
| Minimum Operating Temperature | 150°C | |
| Maximum Power Dissipation Pd | 550mW | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Maximum Operating Temperature | -55°C | |
| Transistor Configuration | Dual | |
| Width | 1.35 mm | |
| Height | 1mm | |
| Length | 2.2mm | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Channel Type Type N | ||
Product Type Small Signal | ||
Maximum Continuous Drain Current Id 910mA | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SC-88 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 440mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.76V | ||
Typical Gate Charge Qg @ Vgs 1.3nC | ||
Minimum Operating Temperature 150°C | ||
Maximum Power Dissipation Pd 550mW | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Maximum Operating Temperature -55°C | ||
Transistor Configuration Dual | ||
Width 1.35 mm | ||
Height 1mm | ||
Length 2.2mm | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
- Pays d'origine :
- CN
This N-Channel dual device was designed with a small footprint package (2x2 mm) with ON Semiconductor's leading planar process for small footprint and increased efficiency. The low figure of merit is particularly suited for single or dual cell Li-Ion battery supplied devices such as cell phones, media players, digital cameras, and PDAs.
Small Footprint (2 x 2 mm)
Low Gate Charge N-Channel Device
ESD Protected Gate
Same Package as SC-70 (6 Leads)
Applications:
Load Power Switching
Li-Ion Battery Supplied Devices
DC-DC Conversion
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