DiodesZetex DMP Type P-Channel MOSFET, 600 mA, 450 V Enhancement, 4-Pin SOT-223 DMP45H21DHE-13
- N° de stock RS:
- 182-7460
- Référence fabricant:
- DMP45H21DHE-13
- Fabricant:
- DiodesZetex
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 25 unités)*
15,08 €
(TVA exclue)
18,25 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 14 mai 2027
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 25 - 225 | 0,603 € | 15,08 € |
| 250 - 475 | 0,542 € | 13,55 € |
| 500 - 975 | 0,527 € | 13,18 € |
| 1000 - 1475 | 0,514 € | 12,85 € |
| 1500 + | 0,501 € | 12,53 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 182-7460
- Référence fabricant:
- DMP45H21DHE-13
- Fabricant:
- DiodesZetex
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 600mA | |
| Maximum Drain Source Voltage Vds | 450V | |
| Series | DMP | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 21mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1.2V | |
| Maximum Power Dissipation Pd | 12.5W | |
| Typical Gate Charge Qg @ Vgs | 4.2nC | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.65mm | |
| Width | 3.55mm | |
| Standards/Approvals | No | |
| Length | 6.55mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 600mA | ||
Maximum Drain Source Voltage Vds 450V | ||
Series DMP | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 21mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1.2V | ||
Maximum Power Dissipation Pd 12.5W | ||
Typical Gate Charge Qg @ Vgs 4.2nC | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Operating Temperature 150°C | ||
Height 1.65mm | ||
Width 3.55mm | ||
Standards/Approvals No | ||
Length 6.55mm | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
This 450V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device include a variety of Telecom and general high voltage switching circuits.
Low Gate Drive
Low Input Capacitance
Fast Switching Speed
Totally Lead-Free
Halogen and Antimony Free. “Green” Device
Applications
Load Switching
Uninterrupted Power Supply
Liens connexes
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